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Ruthenium Bottom Electrode Prepared by Electroplating for a High-density DRAM Capacitor
Cited 16 time in
Web of Science
Cited 12 time in Scopus
- Authors
- Issue Date
- 2004-01-09
- Publisher
- Electrochemical Society
- Citation
- Journal of the Electrochemical Society, 151, C127-C132
- Keywords
- ruthenium ; metallic thin films ; electrodeposits ; electroplating ; DRAM chips ; MIS capacitors
- Abstract
- The possibility of Ru electroplating for application as the bottom electrode in high density dynamic random access memory
~DRAM! capacitors was investigated. Prior to Ru electroplating on a TiN substrate, HF cleaning and Pd activation were performed.
Removal of Ti oxide from the TiN substrate by HF treatment enabled Pd activation, which enhanced the nucleation of Ru
on TiN substrate. Optimized pretreatments led to a continuous Ru film deposition. The surface roughness was measured to be 4.4
nm at 45 nm Ru film on the bare substrate. Moreover Ru electroplating method was also applied to a capacitor node-type TiN
wafer. The deposition rate of Ru on the patterned wafer was the same as that on a bare wafer. The film showed 93% step coverage
and good adhesion, comparable to CVD Ru films.
- ISSN
- 0013-4651
- Language
- English
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