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Ruthenium Bottom Electrode Prepared by Electroplating for a High-density DRAM Capacitor

Cited 16 time in Web of Science Cited 11 time in Scopus
Authors
Kwon, Oh Joong; Cha, Seung Hwan; Kim, Jae Jeong
Issue Date
2004-01-09
Publisher
Electrochemical Society
Citation
Journal of the Electrochemical Society, 151, C127-C132
Keywords
rutheniummetallic thin filmselectrodepositselectroplatingDRAM chipsMIS capacitors
Abstract
The possibility of Ru electroplating for application as the bottom electrode in high density dynamic random access memory
~DRAM! capacitors was investigated. Prior to Ru electroplating on a TiN substrate, HF cleaning and Pd activation were performed.
Removal of Ti oxide from the TiN substrate by HF treatment enabled Pd activation, which enhanced the nucleation of Ru
on TiN substrate. Optimized pretreatments led to a continuous Ru film deposition. The surface roughness was measured to be 4.4
nm at 45 nm Ru film on the bare substrate. Moreover Ru electroplating method was also applied to a capacitor node-type TiN
wafer. The deposition rate of Ru on the patterned wafer was the same as that on a bare wafer. The film showed 93% step coverage
and good adhesion, comparable to CVD Ru films.
ISSN
0013-4651
Language
English
URI
https://hdl.handle.net/10371/65983
DOI
https://doi.org/10.1149/1.1637900
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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