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Direct Plating of Low Resistivity Bright Cu Films onto TiN Barrier Layer via Pd Activation

Cited 27 time in Web of Science Cited 21 time in Scopus
Authors
Kim, Jae Jeong; Kim, Soo-Kil; Kim, Yong Shik
Issue Date
2003-12-09
Publisher
Electrochemical Society
Citation
Journal of the Electrochemical Society, 151, C97-C101
Keywords
integrated circuit metallisationpalladiumtitanium compoundselectroplatingadhesionnucleationmetallic thin filmselectrical resistivitydiffusion barriers
Abstract
For seedless electroplating of low resistivity Cu film applicable to deep submicrometer damascene feature, Pd activation was
introduced to direct Cu electroplating onto a high resistivity TiN barrier to get a high quality Cu film. Displacement-deposited Pd
particles on the TiN substrate acted as nucleation sites for Cu plating. This high-density instantaneous nucleation made it possible
to deposit a continuous, bright Cu film with low resistivity of 3.1 mV cm ~after annealing!. Aided by small amounts of benzotriazole,
Pd activation also gave way to the application of seedless plating to superfilling of a deep submicrometer damascene
structure, where the formation of the seed layer had been a critical issue. Poor adhesion between plated Cu and Pd activated TiN
substrate was greatly improved by the addition of poly~ethylene glycol!. The change in film characteristics was found to be
negligible.
ISSN
0013-4651
Language
English
URI
https://hdl.handle.net/10371/65984
DOI
https://doi.org/10.1149/1.1633269
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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