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Pretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor deposition

Cited 9 time in Web of Science Cited 7 time in Scopus
Authors
Han, Hee; Kim, Jae Jeong; Yoon, Do Young
Issue Date
2004-05-24
Publisher
American Vacuum Society
Citation
Journal of Vacuum Science and Technology a Vacuum Surfaces and Films 22(4), 1120-1123
Keywords
rutheniumsurface treatmentpalladiummetallic thin filmsMOCVDnucleationsurface roughnessdissociation
Abstract
The effects of Pd activation on ruthenium ~Ru! films grown by metalorganic chemical vapor
deposition ~MOCVD! using a bis~ethyl-p-cyclopentadienyl! ruthenium @Ru~EtCp!2# as a precursor
were investigated. Displacement-deposited Pd particles on TiN substrate play a role of active sites
for Ru nucleation. The growth rate was increased as the decomposition of Ru~EtCp!2 was promoted
by Pd activation prior to Ru deposition. Moreover, Pd particles dramatically enhanced Ru nucleation
at the early stage and the surface roughness of the films considerably reduced. From these results,
the possibility of Pd activation as a pretreatment technique for Ru nucleation in Ru–MOCVD is
proposed.
ISSN
0734-2101
Language
English
URI
https://hdl.handle.net/10371/65989
DOI
https://doi.org/10.1116/1.1756876
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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