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Pretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor deposition
Cited 9 time in
Web of Science
Cited 7 time in Scopus
- Authors
- Issue Date
- 2004-05-24
- Publisher
- American Vacuum Society
- Citation
- Journal of Vacuum Science and Technology a Vacuum Surfaces and Films 22(4), 1120-1123
- Keywords
- ruthenium ; surface treatment ; palladium ; metallic thin films ; MOCVD ; nucleation ; surface roughness ; dissociation
- Abstract
- The effects of Pd activation on ruthenium ~Ru! films grown by metalorganic chemical vapor
deposition ~MOCVD! using a bis~ethyl-p-cyclopentadienyl! ruthenium @Ru~EtCp!2# as a precursor
were investigated. Displacement-deposited Pd particles on TiN substrate play a role of active sites
for Ru nucleation. The growth rate was increased as the decomposition of Ru~EtCp!2 was promoted
by Pd activation prior to Ru deposition. Moreover, Pd particles dramatically enhanced Ru nucleation
at the early stage and the surface roughness of the films considerably reduced. From these results,
the possibility of Pd activation as a pretreatment technique for Ru nucleation in Ru–MOCVD is
proposed.
- ISSN
- 0734-2101
- Language
- English
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