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Seedless Fill - up of the Damascene Structure Only by Copper Electroless Plating
Cited 23 time in
Web of Science
Cited 25 time in Scopus
- Authors
- Issue Date
- 2003-08-01
- Publisher
- Japan Society of Applied Physics
- Citation
- Japanese Journal of Applied Physics 42(2003) L953-L955
- Keywords
- copper ; electroless ; damascene ; copper oxide ; temperature
- Abstract
- We attempted to fill up seedlessly the damascene pattern in ULSI interconnection only by Cu electroless plating. Cu2O
content, which was generally detected in Cu electroless plating, was removed through controlling the plating temperature.
Optimum control in electrolyte concentration and plating temperature leaded to good characteristics of electrolessly plated Cu
with 2.1 m cm resistivity, 8.9 nm rms roughness at 160 nm thickness, good adhesion and 10 nm/min deposition rate. The
optimum condition was successfully applied to a damascene pattern with aspect ratio of 3 and via size of 0.13 mm without void
and seam.
- ISSN
- 0021-4922
- Language
- English
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