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Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics

Cited 35 time in Web of Science Cited 38 time in Scopus
Issue Date
2009-08-08
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Electron Device Letters, vol. 30, no. 8, pp. 828~830
Keywords
a-IGZOlow-frequency noise
Abstract
A comparative study is made of the low-frequency
noise (LFN) in amorphous indium–gallium–zinc oxide (a-IGZO)
thin-film transistors (TFTs) with Al2O3 and Al2O3/SiNx gate
dielectrics. The LFN is proportional to 1/fγ , with γ ∼ 1 for both
devices, but the normalized noise for the Al2O3/SiNx device is two
to three orders of magnitude lower than that for the Al2O3 device.
The mobility fluctuation is the dominant LFN mechanism in both
devices, but the noise from the source/drain contacts becomes comparable
to the intrinsic channel noise as the gate overdrive voltage
increases in Al2O3/SiNx devices. The SiNx interfacial layer is
considered to be very effective in reducing LFN by suppressing
the remote phonon scattering from the Al2O3 dielectric. Hooges
parameter is extracted to ∼6.0 × 10−3 in Al2O3/SiNx devices.
ISSN
0741-3106
Language
English
URI
https://hdl.handle.net/10371/68017
DOI
https://doi.org/10.1109/LED.2009.2023543
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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