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Improvement in the Oxidation Resistance of Cu Films by an Electroless Co-Alloy Capping Process

Cited 5 time in Web of Science Cited 7 time in Scopus
Authors

Koo, Hyo-Chol; Cho, Sung Ki; Kwon, Oh Joong; Suh, Myung-Won; Im, Young; Kim, Jae Jeong

Issue Date
2009-05-15
Publisher
Electrochemical Society
Citation
Journal of The Electrochemical Society, 156(7), D236-D241
Abstract
Co-alloy films with various solution compositions CoB, CoWB, and CoW B P were deposited with an electroless technique on
Cu films without Pd activation, and their oxidation barrier performance was analyzed. The degrees of oxidation of all films were
intensively studied. CoB showed excellent capping performance as an oxidation barrier, whereas CoWB and CoW B P exhibited
even poorer oxidation resistance than the case of bare Cu at 400°C. The depth profile of the film compositions and chemical states
of the CoB film before and after oxidation was investigated, the results of which suggested that the oxidation of the B component
in the film had a clear role in the prevention of continuous Cu diffusion to the surface. The multilayer structure of CoB/
CoW B P/Cu for obtaining both electromigration and oxidation resistance was optimized, showing excellent oxidation resistance
comparable to a single-composition CoB film.
ISSN
0013-4651
Language
English
URI
https://hdl.handle.net/10371/68288
DOI
https://doi.org/10.1149/1.3133219
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