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Effects of OH radicals on formation of Cu oxide and polishing performance in Cu Chemical Mechanical Polishing

Cited 9 time in Web of Science Cited 10 time in Scopus
Issue Date
2007-12-05
Publisher
Electrochemical Society
Citation
Electrochemical and Solid-state Letters, 11(2), H32-H35
Abstract
The amount of OH radicals generated varied according to the complexing agent or Cu ion, and the accelerating effect of OH
radicals on the rate of Cu oxide formation was found in acidic pH. When Cu I ions and oxalic acid were added to H2O2-based
slurry, the decreases in etch and removal rates of Cu were observed because more generation of OH radicals resulted in the
formation of thicker Cu oxide compared to additive-free slurry. Therefore, proper control of the formation and dissolution of Cu
oxide led to an increase in etch and removal rates.
ISSN
1099-0062
Language
English
URI
https://hdl.handle.net/10371/68294
DOI
https://doi.org/10.1149/1.2817518
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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