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Effects of OH radicals on formation of Cu oxide and polishing performance in Cu Chemical Mechanical Polishing
Cited 9 time in
Web of Science
Cited 10 time in Scopus
- Authors
- Issue Date
- 2007-12-05
- Publisher
- Electrochemical Society
- Citation
- Electrochemical and Solid-state Letters, 11(2), H32-H35
- Abstract
- The amount of OH radicals generated varied according to the complexing agent or Cu ion, and the accelerating effect of OH
radicals on the rate of Cu oxide formation was found in acidic pH. When Cu I ions and oxalic acid were added to H2O2-based
slurry, the decreases in etch and removal rates of Cu were observed because more generation of OH radicals resulted in the
formation of thicker Cu oxide compared to additive-free slurry. Therefore, proper control of the formation and dissolution of Cu
oxide led to an increase in etch and removal rates.
- ISSN
- 1099-0062
- Language
- English
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