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Copper Bottom-Up Filling by Electroplating Without any Additives on Patterned Wafer

Cited 4 time in Web of Science Cited 3 time in Scopus
Authors
Cha, Seung Hwan; Kim, Seung-Soo; Cho, Sung Ki; Kim, Jae Jeong
Issue Date
2006-12-13
Publisher
Electrochemical Society
Citation
Electrochemical and Solid state Letters, 10(2), D22-D24
Abstract
In conventional Cu electroplating, various additives are used to fill pattern without defects in patterned wafers. Pulse plating and
electrochemical oxidation were used to deposit Cu without any additives. Defects such as voids and seams were generated if only
pulse plating was carried out. Electrochemical oxidation was performed to remove Cu metal containing defects and to remain Cu
species only at the bottom part of the trenches. Then, defect free Cu films could be obtained when Cu electroplating without
additives was performed on the etched substrate.
ISSN
1099-0062
Language
English
URI
https://hdl.handle.net/10371/68299
DOI
https://doi.org/10.1149/1.2400207
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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