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Charge Amplifier With an Enhanced Frequency Response for SPM-Based Data Storage

Cited 3 time in Web of Science Cited 2 time in Scopus
Authors
Lee, Hyunjoong; Woo, Jong-Kwan; Nam, Hyo-Jin; Jin, Won-Hyeog; Jeong, Moongi; Kim, Young-Sik; Shin, Jin-Koog; Kim, Suhwan
Issue Date
2010-09
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Transactions on Circuits and Systems Part 2 Express Briefs Vol. 57, No. 9, pp. 691-695
Keywords
CMOSdata storageCharge amplifierfrequency compensationlead zirconate titanate (PZT)microelectromechanical system (MEMS)scanning probe microscopy (SPM)thermopiezoelectric cantilever
Abstract
Storage systems based on scanning probe microscopy
incorporate an array of thermopiezoelectric cantilevers that require
charge amplifiers with a wide frequency response but low
power consumption.We use an improved frequency compensation
method to enhance the in-band frequency response without requiring
any additional power. Measurements show that the prototype
chip draws the same 68 μA at 1.8 V as an unmodified design but
has a closed-loop frequency response that is ten times greater. The
chip was fabricated in a 0.18-μmstandard CMOS process, and the
charge amplifier core occupies 0.042 mm2.
ISSN
1549-7747
Language
English
URI
http://hdl.handle.net/10371/70057
DOI
https://doi.org/10.1109/TCSII.2010.2056030
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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