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Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS

Cited 6 time in Web of Science Cited 7 time in Scopus
Authors
Lee, Sang Hoon; Lee, Hyunjoong; Woo, Jong-Kwan; Kim, Suhwan
Issue Date
2010-07-08
Publisher
Institution of Engineering and Technology
Citation
Electronics Letters- IEE, 46, (14), pp. 976-977
Abstract
A low-voltage bandgap reference (BGR) circuit is designed and fabricated
in a 90 nm CMOS technology. To mitigate error resulting from
the mismatch in temperature dependency of the current in the output
current mirror device and that of the BGR core, an output-regulated
current mirror is incorporated. Experimental results show that the
output voltage is 497.2 mV at 258C with a temperature coefficient of
28.3 ppm/8C between 2408C and 808C. The circuit occupies
0.0337 mm2 and dissipates 276.6 pW with a supply voltage of 1.2 V.
ISSN
0013-5194
Language
English
URI
http://hdl.handle.net/10371/70060
DOI
https://doi.org/10.1049/el.2010.1546
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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