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Showing results 1 to 14 of 14

Issue DateTitle / Author(s) / CitationFileAltmetrics
2018-05
Contact-engineered electrical properties of MoS2 field-effect transistors via selectively deposited thiol-molecules
DOI
2018-07
Two-dimensional thickness-dependent avalanche breakdown phenomena in MoS2 field-effect transistors under high electric fields
view fileDOI
2019-03
Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping
DOI
2019-08
Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure
DOI
2019-09
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors
view fileDOI
2020-09
Enhanced Charge Injection Properties of Organic Field Effect Transistor by Molecular Implantation Doping (vol 31, 1806697, 2019)
DOI
2021-04
Crystallinity-dependent device characteristics of polycrystalline 2D n=4 Ruddlesden-Popper perovskite photodetectors
DOI
2021-05
Tailored Design-of-Experiments Approach for Device Performance Prediction and Optimization of Flash-Evaporated Organic-Inorganic Halide Perovskite-Based Photodetectors
DOI
2021-10
Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors
DOI
2021-11
Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors
DOI
2022-01
Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra
DOI
2022-04
Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors
DOI
2022-06
Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping
DOI
2022-09
Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors
DOI
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