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Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion
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- Authors
- Issue Date
- 1998-07
- Citation
- IEEE J. Sel. Top. Quant., vol. 4, pp. 619-623, 1998
- Keywords
- Area selectivity ; bandgap tuning ; impurity-free vacancy diffusion (IFVD) ; InGaAsP–InP multiquantum-well (MQW) structures ; lateral diffusion coefficient ; quantum-well intermixing
- Abstract
- Area selectivity of bandgap tuning in the InGaAsPInP
multiquantum-well structure has been investigated using low
temperature photoluminescence (PL). The bandgap blue-shift in
the intermixed region was as much as 170 meV for a rapid thermal
annealer anneal of 30 s at 850 C, and was controllable using
annealing temperature and time. From samples with SiO2 stripe
patterns, clearly separated PL peaks were observed centered at
0.95 and 1.08 eV, each representing signals originating from the
dielectric capped and exposed areas, respectively. In samples with
stripes intervals less than 6 m, PL signals did not separate, but
formed one broad spectrum due to lateral diffusion. The lateral
diffusion was found less than 3.0 m.
- ISSN
- 1077-260X
- Language
- English
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