S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Journal Papers (저널논문_전기·정보공학부)
High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide
Cited 3 time in Web of Science Cited 8 time in Scopus
- Issue Date
- IEEE Photon. Technol. Lett., vol. 3, pp. 164-166, Feb. 1991
- Operation of an optoelectronic integrated circuit which
includes two p-i-ns, preamplifiers, 2 x 2 crosspoint .switch, and output
buffers has been demonstrated. These circuits have been fabricated in
semi-insulating 1nP:Fe substrates by vapor phase epitaxy and ion implantation
using a planar horizontally integrated technology. Signals
modulated at 150 MHz are shown to be switched at 15 MHz, with the
circuits capable of detecting and passing data modulated at - 1 GHz.
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