High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide

Abstract

Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 x 2 crosspoint .switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating 1nP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at - 1 GHz.