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Fully ion-implanted InP JFET with buried p-layer
Cited 11 time in
Web of Science
Cited 11 time in Scopus
- Authors
- Issue Date
- 1990-01
- Citation
- IEEE Electron Device Lett., vol. 11, pp. 57-58, Jan. 1990
- Abstract
- A buried p-layer has been successfully implemented in a
fully ion implanted InP JFET for the first time. Using Be co-implanted
with Si, a sharp channel profile is obtained. The saturation current has
been reduced and the pinch-off characteristic has been improved with
a slight decrease in transconductance and cutoff frequency. The equhalent
circuits for the JFET with and without the buried p-layer are
compared.
- ISSN
- 0741-3106
- Language
- English
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