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Showing results 1 to 16 of 16

Issue DateTitle / Author(s) / CitationFileAltmetrics
2022-06
Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Shin, Wonjun; Bae, Jong-Ho; Kwon, Dongseok; Koo, Ryun-Han; Park, Byung-Gook; Kwon, Daewoong; Lee, Jong-Ho

IEEE Electron Device Letters, Vol.43 No.6, pp.958-961

DOI
2022-06
Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization
DOI
2022-07
Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

Shin, Wonjun; Koo, Ryun-Han; Hong, Seongbin; Kwon, Dongseok; Hwang, Joon; Park, Byung-Gook; Lee, Jong-Ho

IEEE Electron Device Letters, Vol.43 No.7, pp.1001-1004

DOI
2023-02
Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method
DOI
2023-02
Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method
view fileDOI
2023-03
In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide
DOI
2023-05
Low-frequency noise in gas sensors: A review
DOI
2023-10
Annealing Ambient and Film Thickness Dependent NO2Response and 1/f Noise Characteristics of IGZO Resistor-Type Gas Sensors

Shin, Wonjun; Koo, Ryun-Han; Hong, Seongbin; Jeong, Yujeong; Jung, Gyuweon; Lee, Sung-Tae; Lee, Jong-Ho

IEEE Transactions on Electron Devices, Vol.70 No.10, pp.5475-5478

DOI
2023-11
Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor-and Horizontal Floating-Gate FET-Type Gas Sensors

Shin, Wonjun; Koo, Ryun-Han; Hong, Seongbin; Jung, Gyuweon; Jeong, Yujeong; Lee, Sung-Tae; Lee, Jong-Ho

IEEE Transactions on Electron Devices, Vol.70 No.11, pp.5845-5850

DOI
2024-04
Proposition of optimal self-curing method in horizontal-floating gate FET-type gas sensors for reliability improvement

Shin, Wonjun; Koo, Ryun-Han; Hong, Seongbin; Jeong, Yujeong; Jung, Gyuweon; Lee, Sung-Tae; Lee, Jong-Ho

Sensors and Actuators, B: Chemical, Vol.405, p. 135247

DOI
2024-06
Examination of Ferroelectric Domain Dynamics in HZO under Endurance Cycling Stress
DOI
2024-06
Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity
DOI
2024-10
Strain-Stress Impact on Ferroelectric Devices: A Multilayer Analysis and Optimization Strategy for Neural Networks
DOI
2024-10
Chemisorption Manipulation by Adjusting the Carrier Concentration of the Adsorbent and Its Application to Adsorbate Identification
DOI
2024-11
Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing
DOI
2025-06
Novel Gas Sensor Signal Acquisition Method: Amplifying Sensor Signals and Enabling Efficient Gas Identification
DOI
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