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Issue Date	Title / Author(s) / Citation	File	Altmetrics
2016-07	Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells Li, Dong Hua; Kim, Wandong; Shim, Won Bo; Park, Se Hwan; Kim, Yoon; Lee, Gil Sung; Kim, Doo-Hyun; Lee, Jung Hoon; Yun, Jang-Gn; Cho, Seongjae; Park, Il Han; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook Nanoscience and Nanotechnology Letters, Vol.8 No.7, pp.577-580	DOI
2019-03	Analysis of Self Heating Effect in Vertical-channel Field Effect Transistor Myeong, Ilho; Jeon, Jongwook; Kang, Myounggon; Shin, Hyungcheol 2019 20TH INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME), p. 8724510	DOI
2019-06	Effect of Device Scaling on Lateral Migration Mechanism of Electrons in V-NAND Woo, Changbeom; Kim, Shinkeun; Park, Jaeyeol; Shin, Hyungcheol 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.27-28	DOI
2019-06	Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation Park, Jaeyeol; Shin, Hyungcheol 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.61-62	DOI
2019-06	Prediction of Characteristics of Future Scaled 3D NAND Flash Memory by Using TCAD and SPICE Kim, Minsoo; Shin, Hyungcheol 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.63-64	DOI
2020-04	Analysis on Process Variation Effect of 3D NAND Flash Memory Cell through Machine Learning Model Lee, Jang Kyu; Ko, Kyul; Shin, Hyungcheol 2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), p. 9117940	DOI
2020-04	Extraction of Mobility in 3-D NAND Flash Memory with Poly-Si based Macaroni Structure Jo, Hyungjun; Kim, Juhyun; Kim, Minsoo; Shin, Hyungcheol 2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), p. 9117961	DOI
2020-04	Methodology to Predict Random Telegraph Noise Induced Threshold Voltage Shift Using Machine Learning Oh, Eunseok; Lee, Jang Kyu; Seo, Youngsoo; Shin, Hyungcheol 2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), p. 9117805	DOI
2020-04	Compact Model of Read Disturbance by Hot Carrier Injection in 3D NAND Flash Memory Park, Jaeyeol; Son, Dokyun; Kim, Minsoo; Jo, Hyungjun; Shin, Hyungcheol 2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), p. 9117879	DOI
2022-05	Modeling of Grain Boundary Barrier Height for Undoped Polycrystalline Silicon Channel in Macaroni MOSFETs Kim, Juhyun; Shin, Hyungcheol IEEE Transactions on Electron Devices, Vol.69 No.5, pp.2590-2596	DOI

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