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Showing results 1 to 6 of 6

Issue Date	Title / Author(s) / Citation	File	Altmetrics
1997-06	Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping Lee, Ju Han; Si, Sang Kee; Moon, Young Boo; Yoon, Eui Joon; Kim, Sung June Electronics Letters, 1997, 33, (13), pp.1179-1181	DOI
1998-02	Low Temperature Photoluminescence Characteristics of Zn-doped InP Grown by Metalorganic Chemical Vapor Deposition Moon, Young Boo; Si, Sang Kee; Yoon, Eui Joon; Kim, Sung June J. Appl. Phys. 83, 2261 (1998)	view file DOI
1998-02	Deep Level in Heavily Zn-doped InP Layers Implanted with Ti and Ti/P Si, Sang Kee; Kim, Sung June; Moon, Young Boo; Yoon, Eui Joon J. Appl. Phys. 83, 2366 (1998)	view file DOI
2014-04	Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy Seok, Chulkyun; Kim, Sujin; Lee, Jaeyel; Park, Sehun; Park, Yongjo; Yoon, Eui Joon Materials Research Society Symposium - Proceedings, Vol.1670, p. 111283
2014-06	Multi-step plasma etching process for development of highly photosensitive InSb mid-IR FPAs Seok, Chulkyun; Choi, Minkyung; Yang, In-Ssang; Park, Sehun; Park, Yongjo; Yoon, Eui Joon Proceedings of SPIE - The International Society for Optical Engineering, Vol.9070, p. 907018	DOI
2017	Enhanced Thermal Conductivity of the Underfill Materials Using Insulated Core/shell Filler Particles for High Performance Flip Chip Applications Kim, Tae-Ryong; Joo, Kisu; Lim, Boo Taek; Choi, Sung-Soon; Lee, Boung Ju; Yoon, Eui Joon; Jeong, Se Young; Yim, Myung Jin Proceedings - Electronic Components and Technology Conference, pp.1340-1347	DOI

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