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Showing results 1 to 13 of 13

Issue DateTitle / Author(s) / CitationFileAltmetrics
2013-09
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
DOI
2014-09
Atomically thin p–n junctions with van der Waals heterointerfaces
DOI
2014-09
Heterostructures based on inorganic and organic van der Waals systems
DOI
2015-06
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
DOI
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2017-02
Epitaxially Self-Assembled Alkane Layers for Graphene Electronics
DOI
2017-05
Direct observation of grain boundaries in chemical vapor deposited graphene
DOI
2019-01
Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered alpha MoO3 Recrystallized Films

Kim, Hyungsik; Lee, Gwan-Hyoung; Hone, James; Shepard, Kenneth L.

Advanced Materials Interfaces, Vol.6 No.2, p. 1801591

DOI
2019-07
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
DOI
2019-09
No Tilt Angle Dependence of Grain Boundary on Mechanical Strength of Chemically Deposited Graphene Film

Kim, Jong Hun; An, Sung Joo; Lee, Jong-Young; Ji, Eunji; Hone, James; Lee, Gwan-Hyoung

한국세라믹학회지, Vol.56 No.5, pp.506-512

DOI
2020-10
Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure
DOI
2021-12
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
DOI
Electrically Confined Electroluminescence of Neutral Excitons in WSe<sub>2</sub> Light-Emitting Transistors
DOI
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