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Showing results 1 to 13 of 13
Issue Date
Title / Author(s) / Citation
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2002
Homoepitaxial growth and in-situ doping of monocrystalline alpha-SiC thin films by MOCVD for power device applications
정재경
link
2003
탄화규소의 반응성 이온 식각 특성에 관한 연구
김범석
link
2004
탄화규소를 이용한 고전압 쇼트키 다이오드 제작
김대환
link
2004
Growth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device application
엄명윤
link
2005
탄화규소를 이용한 UV(Ultraviolet) 쇼트키 광다이오드 제작에 관한 연구
정상용
link
2005
Fabrication and characterization of planar 4H-SiC metal semiconductor field effect transistors for microwave power device applications
나훈주
link
2007
Homoepitaxial growth and In-situ doping of monocrystalline 4H-SiC for power device applications
송호근
link
2010
Improvement of SiO₂4H-SiC interface quality in 4H-SiC metal-oxide-semiconductor capacitors
문정현
link
2011-08
Performance enhancement of trench-gate silicon carbide metal semiconductor field effect transistors for microwave power device applications
임정혁
link
2015-02
Improving the interface characteristic of SiO2/4H-SiC using nitridation and reduced oxidation process
김창현
view file
2015-08
4H-SiC Homoepitaxial Growth on Various SiC Substrates for Power Device Application
Hunhee Lee
view file
2018-02
Homoepitaxial growth on on-axis 4H-SiC substrate using BTMSM source
김현우
view file
2018-02
Evaluation of deposited silicon oxide with post-deposition annealing for gate oxide of MOS capacitors on 4H-SiC
이수형
view file
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