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Issue Date	Title / Author(s) / Citation	File
2019-08	Growth and characteristics of Ru based electrodes using RuO4 precursor for DRAM capacitor 안철현	view file link
2004	Growth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device application 엄명윤	link
2009	Growth and characterization of high-k SrTiO₃thin films grown by atomic layer deposition 이상운	link
2002	Growth and characterization of inGaN quantum well structures for light emitting diode and laser diode applications 여환국	link
2007	Growth and characterization of single-walled carbon nanotubes for molecular electronic applications 민요셉	link
2019-02	Growth and Leakage Current Control of High-k SrTiO3 Thin Films Grown via Atomic Layer Deposition 김상현	view file
2004-03	Growth and phase transformation of nanometer-sized titanium oxide powders produced by the precipitation method Lee, GH; Zuo, HM Journal of the American Ceramic Society, Vol.87 No.3, pp.473-479	DOI
2011-08	Growth behavior and characteristics of Ru based electrodes grown by CVD/ALD for next generation DRAM device 한정환	link
2011-02	Growth behavior and phase change characteristics of Ge doped Sb-Te thin films for phase change memory application 최설	link
2023	Growth control of transition metal chalcogenides by metal precursors and promoters 정연준	view file link
2017-08	Growth Mechanism of Compound Semiconductor Nanostructures on 2-D Materials Studied by Improved Direct Growth and Observation Techniques 조장현	view file
2016-04	Growth mechanism of strain-dependent morphological change in PEDOT:PSS films Lee, Yoo-Yong; Choi, Gwang Mook; Lim, Seung-Min; Cho, Ju-Young; Choi, In Suk; Nam, Ki Tae; Joo, Young-Chang Scientific Reports, Vol.6, p. 25332	DOI
2006	Growth of crack-free AlGaN epitaxial layers and In-rich InGaNAlGaN quantum dots by MOCVD 송동우	link
2010	Growth of GaN epi-layer using AIN and GaN buffer layer on patterned sapphire substrate by metalorganic chemical vapor deposition (MOCVD) 김남혁	link
2014-08	Growth of GaN thin film on the sapphire covered by hexagonal non-closed packed hollow silica particles 김로	view file
2009	Growth of GaN thin film using silica microspheres coated sapphire substrate 김종학	link
2009	Growth of GaN using Alternative Materials : 김동혁	link
2009	Growth of high quality group IV materials via carbon containing layer 김현우	link
2007	Growth of high quality InAs quantum dots with periodic AsH₃ interruption (PAI) 이영수	link
2007	Growth of In-rich InGaN nanostructures and investigation of their structural, optical, and device properties 김희진	link

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