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Issue Date	Title / Author(s) / Citation	File
2015-01	Low frequency noise characteristics in multilayer WSe2 field effect transistor Cho, In-Tak; Kim, Jong In; Hong, Yoonki; Roh, Jeongkyun; Shin, Hyeonwoo; Baek, Geun Woo; Lee, Changhee; Hong, Byung Hee; Jin, Sung Hun; Lee, Jong-Ho Applied Physics Letters, Vol.106 No.2, p. 023504	DOI
2016-08	Elimination of the gate and drain bias stresses in I-V characteristics of WSe2 FETs by using dual channel pulse measurement Park, Jun-Mo; Cho, In-Tak; Kang, Won-Mook; Park, Byung-Gook; Lee, Jong-Ho Applied Physics Letters, Vol.109 No.5, p. 053503	DOI
2016-11	Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho Nanomaterials, Vol.6 No.11, p. 193	DOI
2017-05	Thickness-dependent Schottky barrier height of MoS2 field-effect transistors Kwon, Junyoung; Lee, Jong-Young; Yu, Young-Jun; Lee, Chul-Ho; Cui, Xu; Honed, James; Lee, Gwan-Hyoung Nanoscale, Vol.9 No.18, pp.6151-6157	DOI
2019-02	Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates Roh, Jeongkyun; Ryu, Jae Hyeon; Baek, Geun Woo; Jung, Heeyoung; Seo, Seung Gi; An, Kunsik; Jeong, Byeong Guk; Lee, Doh C.; Hong, Byung Hee; Bae, Wan Ki; Lee, Jong-Ho; Lee, Changhee; Jin, Sung Hun Small, Vol.15 No.7, p. 1803852	DOI