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Showing results 1 to 21 of 21

Issue Date	Title / Author(s) / Citation	File
1997	원격플라즈마 유기금속화학증착법에 의한 저온 GaN 박막 성장 및 플라즈마 발광 특성 분석 손철수	link
1998	원격플라즈마 유기금속화학기상증착법에 의한 GaN 및 InGaN 박막의 성장 김민홍	link
2002	Hydride Vapor Phase Epitaxy를 이용한 GaN 후막증착과 극성이 결정성장에 미치는 영향 이수민	link
2002	Growth and characterization of inGaN quantum well structures for light emitting diode and laser diode applications 여환국	link
2003	HVPE법을 이용한 GaN 결정의 성장에 미치는 극성의 영향 김병훈	link
2004	Epitaxial growth of thin GaNAs and InGaNAs layers by metalorganic chemical vapor deposition 나현석	link
2004	Characterization of the surface acoustic wave propagation properties for GaN and PMN-PT, and their application for high frequency devices 최국현	link
2004	HVPE법으로 성장시킨 GaN의 극성 분석 정회구	link
2004	(The)Growth of In(Ga)NGaN nanostructures by metalorganic chemical vapor deposition 김현진	link
2007	Growth of In-rich InGaN nanostructures and investigation of their structural, optical, and device properties 김희진	link
2008	(The) hydroxyl-quenching-related photoluminescence properties of SnO₂:Eu³+ nanoparticles 강명구	link
2009	Growth of GaN using Alternative Materials : 김동혁	link
2012-08	Improved crystal quality of GaN epitaxial layer using GaN nano-island in the buffer layer 유효상	view file
2014-08	The study on the epitaxial growth of GaN by HVPE 이문상	view file
2015-11	V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells Sheen, Mi-Hyang; Kim, Sung-Dae; Lee, Jong-Hwan; Shim, Jong-In; Kim, Young-Woon JOURNAL OF ELECTRONIC MATERIALS, Vol.44 No.11, pp.4134-4138	DOI
2016-02	Numerical Studies on the GaN Thin Film Layer Grown on Sapphire Wafer by Multi-Wafer Hydride Vapor Phase Epitaxy Equipment 한학봉	view file
2016-02	A study on the low temperature buffer layer for III-nitride electronic device 신인수	view file
2016-08	Study on Heteroepitaxial Growth of GaN Layer using α-Al2O3 Nanostructure 문대영	view file
2017-02	Development of a cathodoluminescence system for TEM and its applications to the investigation of bandgap-transition characteristics of GaN and MoS2 신미향	view file
2018-02	Study on cavity engineered sapphire substrate for highly efficient GaN-based light-emitting diodes 장정환	view file
2018-02	Analysis of plasma-treated sapphire surface and its effect on crystallized Al2O3 quality 김기웅	view file