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Showing results 1 to 33 of 33

Issue DateTitle / Author(s) / CitationFileAltmetrics
2006-01
Covalently bridging gaps in single-walled carbon nanotubes with conducting molecules
DOI
2007-05
Scaling of resistance and electron mean free path of single-walled carbon nanotubes

Purewal, Meninder S.; Hong, Byung Hee; Ravi, Anirudhh; Chandra, Bhupesh; Hone, James; Kim, Philip

Physical Review Letters, Vol.98 No.18, p. 186808

DOI
2011-08
Inking Elastomeric Stamps with Micro-Patterned, Single Layer Graphene to Create High-Performance OFETs
DOI
2011-11
Adjacent assembly of self-assembled monolayers for the construction of selective bio-platforms

Ron, Amit; Lee, Gwan Hyoung; Amar, Levy; Ghassemi, Saba; Hone, James

Sensors and Actuators, B: Chemical, Vol.159 No.1, pp.75-81

DOI
2011-12
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
DOI
2013
Effect of surface morphology on friction of graphene on various substrates
DOI
2013-03
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
DOI
2013-03
Tightly bound trions in monolayer MoS 2
DOI
2013-04
Electrically integrated SU-8 clamped graphene drum resonators for strain engineering
DOI
2013-05
High-Strength Chemical-Vapor Deposited Graphene and Grain Boundaries
DOI
2013-09
Graphene Metallization of High-Stress Silicon Nitride Resonators for Electrical Integration
DOI
2013-09
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
DOI
2013-12
Graphene mechanical oscillators with tunable frequency
DOI
2014-01
Effect of defects on the intrinsic strength and stiffness of graphene
DOI
2014-05
Epitaxial Growth of Molecular Crystals on van der Waals Substrates for High-Performance Organic Electronics
DOI
2014-08
Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures
DOI
2014-09
Atomically thin p–n junctions with van der Waals heterointerfaces
DOI
2014-09
Heterostructures based on inorganic and organic van der Waals systems
DOI
2015-05
Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films
DOI
2015-06
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
DOI
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2015-08
Bright visible light emission from graphene
DOI
2015-09
An aptameric graphene nanosensor for label-free detection of small-molecule biomarkers
DOI
2016-11
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
DOI
2017-02
Epitaxially Self-Assembled Alkane Layers for Graphene Electronics
DOI
2017-05
Direct observation of grain boundaries in chemical vapor deposited graphene
DOI
2019
Near ultraviolet light emission in hexagonal boron nitride based van der Waals heterostructures
DOI
2019-01
Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered alpha MoO3 Recrystallized Films

Kim, Hyungsik; Lee, Gwan-Hyoung; Hone, James; Shepard, Kenneth L.

Advanced Materials Interfaces, Vol.6 No.2, p. 1801591

DOI
2019-07
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
DOI
2019-09
No Tilt Angle Dependence of Grain Boundary on Mechanical Strength of Chemically Deposited Graphene Film

Kim, Jong Hun; An, Sung Joo; Lee, Jong-Young; Ji, Eunji; Hone, James; Lee, Gwan-Hyoung

한국세라믹학회지, Vol.56 No.5, pp.506-512

DOI
2020-10
Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure
DOI
2021-12
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
DOI
2024-04
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
DOI
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