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Showing results 1 to 12 of 12

Issue Date	Title / Author(s) / Citation	File	Altmetrics
2014-03	Charge transport and morphology of pentacene films confined in nano-patterned region Kim, Tae-Sik; Kim, Se Hyun; Jang, Mi; Yang, Hoichang; Lee, Tae-Woo NPG Asia Materials, Vol.6 No.3, p. e91	DOI
2014-09	Atomically thin p–n junctions with van der Waals heterointerfaces Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F.; Guo, Jing; Hone, James; Kim, Philip Nature Nanotechnology, Vol.9 No.9, pp.676-681	DOI
2015-07	Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James ACS Nano, Vol.9 No.7, pp.7019-7026	DOI
2017-03	High-Density Single-Layer Coating of Gold Nanoparticles onto Multiple Substrates by Using an Intrinsically Disordered Protein of alpha-Synuclein for Nanoapplications Bhak, Ghibom; Lee, Junghee; Kim, Chang-Hyun; Chung, Dong Young; Kang, Jin Hyoun; Oh, Soojung; Lee, Jungsup; Kang, Jin Soo; Yoo, Ji Mun; Yang, Jee Eun; Rhoo, Kun Yil; Park, Sunghak; Lee, Somin; Nam, Ki Tae; Jeon, Noo Li; Jang, Jyongsik; Hong, Byung Hee; Sung, Yung-Eun; Yoon, Myung-Han; Paik, Seung R. ACS Applied Materials and Interfaces, Vol.9 No.10, pp.8519-8532	DOI
2017-05	Thickness-dependent Schottky barrier height of MoS2 field-effect transistors Kwon, Junyoung; Lee, Jong-Young; Yu, Young-Jun; Lee, Chul-Ho; Cui, Xu; Honed, James; Lee, Gwan-Hyoung Nanoscale, Vol.9 No.18, pp.6151-6157	DOI
2019-05	T cell migration in microchannels densely packed with T cells Park, HyoungJun; Doh, Junsang Scientific Reports, Vol.9 No.1, p. 7198	DOI
2019-07	All-2D ReS2 transistors with split gates for logic circuitry Kwon, Junyoung; Shin, Yongjun; Kwon, Hyeokjae; Lee, Jae Yoon; Park, Hyunik; Watanabe, Kenji; Taniguchi, Takashi; Kim, Jihyun; Lee, Chul-Ho; Im, Seongil; Lee, Gwan-Hyoung Scientific Reports, Vol.9 No.1, p. 10354	DOI
2020-11	Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications Ko, Tae-Jun; Li, Hao; Mofid, Sohrab Alex; Yoo, Changhyeon; Okogbue, Emmanuel; Han, Sang Sub; Shawkat, Mashiyat Sumaiya; Krishnaprasad, Adithi; Islam, Molla Manjurul; Dev, Durjoy; Shin, Yongjun; Oh, Kyu Hwan; Lee, Gwan-Hyoung; Roy, Tania; Jung, Yeonwoong iScience, Vol.23 No.11, p. 101676	DOI
2022-02	Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control Shin, June-Chul; Kim, Yeon Ho; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chul-Ho; Lee, Gwan-Hyoung Advanced Materials Interfaces, Vol.9 No.4, p. 2101763	DOI
2022-09	Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors Jang, Juntae; Kim, Jae-Keun; Shin, Jiwon; Kim, Jaeyoung; Baek, Kyeong-Yoon; Park, Jaehyoung; Park, Seungmin; Kim, Young Duck; Parkin, Stuart S P; Kang, Keehoon; Cho, Kyungjune; Lee, Takhee Science Advances, Vol.8 No.38, p. eabn3181	DOI
2024-04	Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors Shin, June-Chul; Jeong, Jae Hwan; Kwon, Junyoung; Kim, Yeon Ho; Kim, Bumho; Woo, Seung-Je; Woo, Kie Young; Cho, Minhyun; Watanabe, Kenji; Taniguchi, Takashi; Kim, Young Duck; Cho, Yong-Hoon; Lee, Tae-Woo; Hone, James; Lee, Chul-Ho; Lee, Gwan-Hyoung Advanced Materials, Vol.36 No.14	DOI
2024-06	In-plane anisotropic two-dimensional materials for twistronics Kim, Hangyel; Kim, Changheon; Jung, Yeonwoong; Kim, Namwon; Son, Jangyup; Lee, Gwan-Hyoung Nanotechnology, Vol.35 No.26, p. 262501	DOI

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