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Showing results 1 to 14 of 14

Issue DateTitle / Author(s) / CitationFileAltmetrics
2018-08
Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
DOI
2018-09
Precise temperature sensing with nanoscale thermal sensors based on diamond NV centers
DOI
2019-01
Self-Powered Chemical Sensing Driven by Graphene-Based Photovoltaic Heterojunctions with Chemically Tunable Built-In Potentials
DOI
2019-11
Boosting the photocatalytic hydrogen evolution performance via an atomically thin 2D heterojunction visualized by scanning photoelectrochemical microscopy
DOI
2020-04
Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions
DOI
2020-04
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge
DOI
2020-12
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Huh, Woong; Lee, Donghun; Lee, Chul-Ho

Advanced Materials, Vol.32 No.51, p. 2002092

DOI
2021-03
Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
DOI
2021-09
Remote modulation doping in van der Waals heterostructure transistors
DOI
2022-12
Bowing-alleviated continuous bandgap engineering of wafer-scale WS2xSe2(1-x) monolayer alloys and their assembly into hetero-multilayers
DOI
2023-06
Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics
DOI
2023-10
Exploring the Magnetic Properties of Individual Barcode Nanowires using Wide-Field Diamond Microscopy
DOI
2024-01
All-Solution-Processed High-Performance MoS<sub>2</sub> Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric
DOI
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
DOI
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