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Showing results 121 to 139 of 139

Issue DateTitle / Author(s) / CitationFileAltmetrics
2023-04
Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS2

Jeong, Jae Hwan; Jung, Yeonjoon; Park, Jang-Ung; Lee, Gwan-Hyoung

Nano Letters, Vol.23 No.7, pp.3085-3089

DOI
2023-04
Laser-Induced Phase Transition and Patterning of hBN-Encapsulated Mo Te2
DOI
2023-06
In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3
DOI
2023-07
Angstrom-Confined Electrochemical Synthesis of Sub-Unit-Cell Non-Van Der Waals 2D Metal Oxides
DOI
2023-10
Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices
DOI
2023-11
Solvent-free transfer of monolayer graphene with recrystallized cyclododecane
DOI
2023-12
Reversible Transition of Semiconducting PtSe<sub>2</sub> and Metallic PtTe<sub>2</sub> for Scalable All-2D Edge-Contacted FETs
DOI
2023-12
Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers
DOI
2024-01
Phase Engineering of Two-Dimensional Transition Metal Dichalcogenides

Kim, Jong Hun; Sung, Hayeong; Lee, Gwan-Hyoung

Small Science, Vol.4 No.1

DOI
2024-02
Facilitated fluorination and etching of 2D materials
DOI
2024-03
Optical grade transformation of monolayer transition metal dichalcogenides <i>via</i> encapsulation annealing
DOI
2024-03
Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides
DOI
2024-04
Ultrathin and Deformable Graphene Etch Mask for Fabrication of 3D Microstructures
DOI
2024-04
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
DOI
2024-05
Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics
DOI
2024-05
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
DOI
2024-06
Charge-transfer hyperbolic polaritons in α-MoO<sub>3</sub>/graphene heterostructures
DOI
2024-06
In-plane anisotropic two-dimensional materials for twistronics
DOI
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
DOI
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