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Showing results 1 to 44 of 44

Issue DateTitle / Author(s) / CitationFileAltmetrics
2005-10
Extracting subnanometer single shells from ultralong multiwalled carbon nanotubes

Hong, Byung Hee; Small, Joshua P.; Purewal, Meninder S.; Mullokandov, Asher; Sfeir, Matthew Y.; Wang, Feng; Lee, Ju Young; Heinz, Tony F.; Brus, Louis E.; Kim, Philip; Kim, Kwang S.

Proceedings of the National Academy of Sciences of the United States of America, Vol.102 No.40, pp.14155-14158

DOI
2005-11
Quasi-continuous growth of ultralong carbon nanotube arrays

Hong, Byung Hee; Lee, Ju Young; Beetz, Tobias; Zhu, Yimei; Kim, Philip; Kim, Kwang S.

Journal of the American Chemical Society, Vol.127 No.44, pp.15336-15337

DOI
2006-01
Covalently bridging gaps in single-walled carbon nanotubes with conducting molecules
DOI
2007-05
Scaling of resistance and electron mean free path of single-walled carbon nanotubes

Purewal, Meninder S.; Hong, Byung Hee; Ravi, Anirudhh; Chandra, Bhupesh; Hone, James; Kim, Philip

Physical Review Letters, Vol.98 No.18, p. 186808

DOI
2009-01
Thermoelectric power measurements of wide band gap semiconducting nanowires

Lee, Chul-Ho; Yi, Gyu-Chul; Zuev, Yuri M.; Kim, Philip

Applied Physics Letters, Vol.94 No.2, p. 022106

DOI
2009-02
Large-scale pattern growth of graphene films for stretchable transparent electrodes
DOI
2009-07
Near-field focusing and magnification through self-assembled nanoscale spherical lenses
DOI
2011-08
Inking Elastomeric Stamps with Micro-Patterned, Single Layer Graphene to Create High-Performance OFETs
DOI
2011-12
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
DOI
2012-01
Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
DOI
2013-03
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
DOI
2013-04
Electrically integrated SU-8 clamped graphene drum resonators for strain engineering
DOI
2013-07
Nanoscale Atoms in Solid-State Chemistry
DOI
2013-09
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
DOI
2014-05
Epitaxial Growth of Molecular Crystals on van der Waals Substrates for High-Performance Organic Electronics
DOI
2014-08
Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures
DOI
2014-09
Heterostructures based on inorganic and organic van der Waals systems
DOI
2014-09
Atomically thin p–n junctions with van der Waals heterointerfaces
DOI
2014-12
Ferromagnetic Ordering in Superatomic Solids
DOI
2015-05
Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films
DOI
2015-06
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
DOI
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2015-08
Tunable Electrical and Optical Characteristics in Mono layer Graphene and Few-Layer MoS<sub>2</sub> Heterostructure Devices
DOI
2016-02
van der Waals Solids from Self-Assembled Nanoscale Building Blocks
DOI
2016-05
Patterning Superatom Dopants on Transition Metal Dichalcogenides
DOI
2017-02
Epitaxially Self-Assembled Alkane Layers for Graphene Electronics
DOI
2018-06
Heterointerface effects in the electrointercalation of van der Waals heterostructures
DOI
2018-12
Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures

de Jong, Tobias A.; Jobst, Johannes; Yoo, Hyobin; Krasovskii, Eugene E.; Kim, Philip; van der Molen, Sense Jan

Physica Status Solidi (B): Basic Research, Vol.255 No.12, p. 1800191

DOI
2019-05
Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
DOI
2019-06
Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors
DOI
2020-05
Nano-photocurrent Mapping of Local Electronic Structure in Twisted Bilayer Graphene
DOI
2020-06
Comment on "Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors" Reply
DOI
2020-07
Tunable spin-polarized correlated states in twisted double bilayer graphene
DOI
2020-08
Imaging of 2-dimensional dislocation networks in twisted bilayer graphene and beyond
DOI
2020-09
Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe2/MoSe2bilayers
DOI
2020-11
Spatially correlated incommensurate lattice modulations in an atomically thin high-temperature Bi2.1Sr1.9CaCu2.0O8+y superconductor
DOI
2021-02
Dual-Gated Graphene Devices for Near-Field Nano-imaging
DOI
2022-12
Torsional periodic lattice distortions and diffraction of twisted 2D materials
DOI
2023-03
Topological nature of dislocation networks in two-dimensional moir? materials
DOI
2023-04
Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors
DOI
2023-08
Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers
DOI
2023-12
Time-reversal symmetry breaking superconductivity between twisted cuprate superconductors
DOI
2025-03
Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane
DOI
2025-05
Unconventional domain tessellations in moiré-of-moiré lattices
DOI
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