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Showing results 1 to 46 of 46

Issue DateTitle / Author(s) / CitationFileAltmetrics
2013-02
Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride
DOI
2013-09
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
DOI
2014-05
Epitaxial Growth of Molecular Crystals on van der Waals Substrates for High-Performance Organic Electronics
DOI
2014-08
Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures
DOI
2015-06
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
DOI
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2015-08
Tunable Electrical and Optical Characteristics in Mono layer Graphene and Few-Layer MoS<sub>2</sub> Heterostructure Devices
DOI
2018-06
Heterointerface effects in the electrointercalation of van der Waals heterostructures
DOI
2018-09
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
DOI
2019
Near ultraviolet light emission in hexagonal boron nitride based van der Waals heterostructures
DOI
2019-05
Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
DOI
2019-06
Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors
DOI
2019-07
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
DOI
2019-07
All-2D ReS2 transistors with split gates for logic circuitry
DOI
2019-09
Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds
DOI
2020-01
Nearly room temperature ferromagnetism in a magnetic metal-rich van der Waals metal
DOI
2020-05
Nano-photocurrent Mapping of Local Electronic Structure in Twisted Bilayer Graphene
DOI
2020-06
Comment on "Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors" Reply
DOI
2020-07
Tunable spin-polarized correlated states in twisted double bilayer graphene
DOI
2020-09
Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe2/MoSe2bilayers
DOI
2020-10
Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure
DOI
2020-11
Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing

Kim, Seungho; Myeong, Gyuho; Park, Jeehoon; Jin, Taehyuk; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chulho; Cho, Sungjae

ACS Applied Electronic Materials, Vol.2 No.11, pp.3491-3496

DOI
2020-11
Spatially correlated incommensurate lattice modulations in an atomically thin high-temperature Bi2.1Sr1.9CaCu2.0O8+y superconductor
DOI
2021-01
Tailoring Single- And Double-Sided Fluorination of Bilayer Graphene via Substrate Interactions
DOI
2021-02
Stacking-Specific Reversible Oxidation of Bilayer Graphene
DOI
2021-10
Modulation of optical and electrical properties in hexagonal boron nitride by defects induced via oxygen plasma treatment
DOI
2021-10
Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure
DOI
2021-12
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
DOI
2021-12
Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure
DOI
2022-02
Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control

Shin, June-Chul; Kim, Yeon Ho; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chul-Ho; Lee, Gwan-Hyoung

Advanced Materials Interfaces, Vol.9 No.4, p. 2101763

DOI
2022-07
Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices
DOI
2022-10
Irreversible Conductive Filament Contacts for Passivated van der Waals Heterostructure Devices
DOI
2022-10
Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors
DOI
2022-12
Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

Lee, Yunah; Chang, Yunyeong; Ryu, Huije; Kim, Jong Hun; Watanabe, Kenji; Taniguchi, Takashi; Kim, Miyoung; Lee, Gwan-Hyoung

ACS Applied Materials and Interfaces, Vol.15 No.4, pp.6092-6097

DOI
2023-01
In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2
DOI
2023-04
Laser-Induced Phase Transition and Patterning of hBN-Encapsulated Mo Te2
DOI
2023-08
Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers
DOI
2023-12
Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers
DOI
2024-03
Optical grade transformation of monolayer transition metal dichalcogenides <i>via</i> encapsulation annealing
DOI
2024-03
Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides
DOI
2024-04
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
DOI
2024-05
Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics
DOI
2024-12
Electrically Pumped h-BN Single-Photon Emission in van der Waals Heterostructure
DOI
2025-02
Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides
DOI
2025-03
Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane
DOI
2025-05
Unconventional domain tessellations in moiré-of-moiré lattices
DOI
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