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Showing results 61 to 115 of 115

Issue DateTitle / Author(s) / CitationFileAltmetrics
2018-07
Correlational effects of the molecular-tilt configuration and the intermolecular van der waals interaction on the charge transport in the molecular junction
DOI
2018-08
Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
DOI
2018-08
Enhanced chemical reactivity of graphene by fermi level modulation
DOI
2018-09
Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid

Park, Cheol-Joon; Park, Hyeon Jung; Lee, Jae Yoon; Kim, Jeongyong; Lee, Chul-Ho; Joo, Jinsoo

ACS Applied Materials & Interfaces, Vol.10 No.35, pp.29848-29856

DOI
2018-09
Precise temperature sensing with nanoscale thermal sensors based on diamond NV centers
DOI
2018-10
Generation, transport and detection of valley-locked spin photocurrent in WSe2-graphene-Bi2Se3 heterostructures
DOI
2018-11
Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors
DOI
2019-01
Skin-Like, Dynamically Stretchable, Planar Supercapacitors with Buckled Carbon Nanotube/Mn–Mo Mixed Oxide Electrodes and Air-Stable Organic Electrolyte
DOI
2019-01
Self-Powered Chemical Sensing Driven by Graphene-Based Photovoltaic Heterojunctions with Chemically Tunable Built-In Potentials
DOI
2019-07
All-2D ReS2 transistors with split gates for logic circuitry
DOI
2019-10
Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short-Wave Infrared Detection
DOI
2019-11
Boosting the photocatalytic hydrogen evolution performance via an atomically thin 2D heterojunction visualized by scanning photoelectrochemical microscopy
DOI
2020-03
Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides
DOI
2020-03
Tunable rectification in a molecular heterojunction with two-dimensional semiconductors
DOI
2020-04
Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions
DOI
2020-04
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge
DOI
2020-05
Temperature dependence of optical properties of monolayer WS2 by spectroscopic ellipsometry
DOI
2020-06
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
DOI
2020-07
An in-plane WSe2 p–n homojunction two-dimensional diode by laser-induced doping

Yang, Sujeong; Lee, Geonyeop; Kim, Janghyuk; Yang, Seunghoon; Lee, Chul-Ho; Kim, Jihyun

Journal of Materials Chemistry C, Vol.8 No.25, pp.8393-8398

DOI
2020-09
Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel
DOI
2020-10
Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure
DOI
2020-11
Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing

Kim, Seungho; Myeong, Gyuho; Park, Jeehoon; Jin, Taehyuk; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chulho; Cho, Sungjae

ACS Applied Electronic Materials, Vol.2 No.11, pp.3491-3496

DOI
2020-12
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Huh, Woong; Lee, Donghun; Lee, Chul-Ho

Advanced Materials, Vol.32 No.51, p. 2002092

DOI
2021-01
Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS2
DOI
2021-02
Design of 2D Layered Catalyst by Coherent Heteroepitaxial Conversion for Robust Hydrogen Generation
DOI
2021-02
Grain Boundaries Boost Oxygen Evolution Reaction in NiFe Electrocatalysts
DOI
2021-02
Polarization Control of Deterministic Single-Photon Emitters in Monolayer WSe2
DOI
2021-03
Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
DOI
2021-07
Copper Hexacyanoferrate Thin Film Deposition and Its Application to a New Method for Diffusion Coefficient Measurement
DOI
2021-08
Vertically aligned MoS2 thin film catalysts with Fe-Ni sulfide nanoparticles by one-step sulfurization for efficient solar water reduction
DOI
2021-09
The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening
DOI
2021-09
Remote modulation doping in van der Waals heterostructure transistors
DOI
2021-10
Synergistic SERS Enhancement in GaN-Ag Hybrid System toward Label-Free and Multiplexed Detection of Antibiotics in Aqueous Solutions
DOI
2021-10
Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure
DOI
2021-11
Defect-Controlled, Scalable Layer-by-Layer Assembly of High-k Perovskite Oxide Nanosheets for All Two-Dimensional Nanoelectronics
DOI
2021-11
Tailoring the Interfacial Band Offset by the Molecular Dipole Orientation for a Molecular Heterojunction Selector
DOI
2021-12
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
DOI
2022-02
Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control

Shin, June-Chul; Kim, Yeon Ho; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chul-Ho; Lee, Gwan-Hyoung

Advanced Materials Interfaces, Vol.9 No.4, p. 2101763

DOI
2022-03
Visualizing Grain Statistics in MOCVD WSe2 through Four-Dimensional Scanning Transmission Electron Microscopy
DOI
2022-03
Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature
DOI
2022-04
Hetero-Integration of Silicon Nanomembranes with 2D Materials for Bioresorbable, Wireless Neurochemical System
DOI
2022-10
Irreversible Conductive Filament Contacts for Passivated van der Waals Heterostructure Devices
DOI
2022-10
Molecular Van Der Waals Heterojunction Photodiodes Enabling Dipole-Induced Polarity Switching
DOI
2022-10
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9
DOI
2022-11
Observation of H2 Evolution and Electrolyte Diffusion on MoS2 Monolayer by In Situ Liquid-Phase Transmission Electron Microscopy
DOI
2022-11
Normally Off WSe2 Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Lee, Dongryul; An, Jin Yong; Lee, Chul-Ho; Bong, Ki Wan; Kim, Jihyun

ACS Applied Nano Materials, Vol.5 No.12, pp.18462-18468

DOI
2022-12
Bowing-alleviated continuous bandgap engineering of wafer-scale WS2xSe2(1-x) monolayer alloys and their assembly into hetero-multilayers
DOI
2023-02
A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency
DOI
2023-04
Laser-Induced Phase Transition and Patterning of hBN-Encapsulated Mo Te2
DOI
2023-06
Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics
DOI
2023-10
Exploring the Magnetic Properties of Individual Barcode Nanowires using Wide-Field Diamond Microscopy
DOI
2024
Artificial neuromodulator–synapse mimicked by a three-terminal vertical organic ferroelectric barristor for fast and energy-efficient neuromorphic computing
DOI
2024-01
All-Solution-Processed High-Performance MoS<sub>2</sub> Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric
DOI
2024-04
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
DOI
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
DOI
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